Invention Grant
- Patent Title: Method for fabricating a folded channel trench MOSFET
-
Application No.: US16264540Application Date: 2019-01-31
-
Publication No.: US10553714B2Publication Date: 2020-02-04
- Inventor: Sik Lui
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg; Robert Pullman
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/266 ; H01L21/768 ; H01L23/528 ; H01L29/08 ; H01L29/10 ; H01L29/66
Abstract:
A trench MOSFET device is fabricated with body source regions that undulate along a channel width direction of the MOSFET device such that the body region and source region have variations in depth along the channel width direction. The undulations increase a channel width of the MOSFET device.
Public/Granted literature
- US20190172945A1 FOLDED CHANNEL TRENCH MOSFET Public/Granted day:2019-06-06
Information query
IPC分类:
