Invention Grant
- Patent Title: Precessional spin current structure for MRAM
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Application No.: US16027739Application Date: 2018-07-05
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Publication No.: US10553787B2Publication Date: 2020-02-04
- Inventor: Mustafa Michael Pinarbasi , Michail Tzoufras , Bartlomiej Adam Kardasz
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; H01L43/10 ; G11C11/16
Abstract:
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.
Public/Granted literature
- US20180315920A1 Precessional Spin Current Structure for MRAM Public/Granted day:2018-11-01
Information query
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