Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US15908262Application Date: 2018-02-28
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Publication No.: US10553791B2Publication Date: 2020-02-04
- Inventor: Yoshiaki Asao
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-038335 20170301
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; H01L27/24

Abstract:
According to one embodiment, a semiconductor includes a first wiring, a second wiring, a first electrode, a second electrode and a memory cell. The first wiring extends in a first direction. The second wiring extends in a second direction crossing the first direction. The first electrode is connected to the first wiring. The second electrode is connected to the second wiring. The memory cell is arranged between the first electrode and the second electrode. The memory cell includes a memory element electrically connected to the first electrode, and a selector provided between the memory element and the second electrode and electrically connected to the second electrode, and the memory element and the selector are of a same conductivity type.
Public/Granted literature
- US20180254412A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2018-09-06
Information query
IPC分类: