Invention Grant
- Patent Title: Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
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Application No.: US15574739Application Date: 2016-05-19
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Publication No.: US10554017B2Publication Date: 2020-02-04
- Inventor: Jung Han , Yufeng Li , Ge Yuan
- Applicant: Yale University
- Applicant Address: US CT New Haven
- Assignee: Yale University
- Current Assignee: Yale University
- Current Assignee Address: US CT New Haven
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2016/033270 WO 20160519
- International Announcement: WO2016/187421 WO 20161124
- Main IPC: H01S5/20
- IPC: H01S5/20 ; H01S5/30 ; H01S5/343 ; H01S5/32 ; H01L21/306

Abstract:
Edge-emitting laser diodes having high confinement factors and lattice-matched, porous cladding layers are described. The laser diodes may be formed from layers of III-nitride material. A cladding layer may be electrochemically etched to form a porous cladding layer having a high refractive index contrast with an active junction of the device. A transparent conductive oxide layer may be deposited to form a top-side cladding layer with high refractive index contrast and low resistivity.
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