Invention Grant
- Patent Title: Semiconductor apparatus
-
Application No.: US15364182Application Date: 2016-11-29
-
Publication No.: US10554037B2Publication Date: 2020-02-04
- Inventor: Shigemi Miyazawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2016-006366 20160115
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H01L29/866 ; F02P15/00 ; H01L27/02 ; F02P3/055 ; F02P11/00 ; F02P17/00

Abstract:
A semiconductor apparatus can block the voltage from the power source when the voltage from the power source reaches an excessive level, without requiring a larger chip size. Provided is a semiconductor apparatus including a power semiconductor element a gate of which is controlled in response to a control signal, an overvoltage detector configured to detect that a voltage at a collector terminal of the power semiconductor element reaches an overvoltage level, and a block unit configured to, in response to the detection of the overvoltage level, control the gate of the power semiconductor element to transition to an off-voltage. The semiconductor apparatus may further include a reset unit configured to, in response to that the control signal is input that turns on the power semiconductor element, output a reset signal for a predetermined period of time.
Public/Granted literature
- US20170207618A1 SEMICONDUCTOR APPARATUS Public/Granted day:2017-07-20
Information query