An acoustic wave device includes: a substrate; a first piezoelectric thin film resonator including a first resonance region in which a first lower electrode and a first upper electrode sandwich a first piezoelectric film; a second piezoelectric thin film resonator including a second resonance region in which a second lower electrode and a second upper electrode sandwich a second piezoelectric film; and a wiring layer that is located from an upper surface of the first lower electrode in a first extraction region, in which the first lower electrode is extracted from the first resonance region, to an upper surface of the second upper electrode located in a second extraction region, in which the second upper electrode is extracted from the second resonance region, and has a film thickness on the first lower electrode greater than a film thickness of the second piezoelectric film.