Invention Grant
- Patent Title: Radio frequency detection circuit
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Application No.: US16206317Application Date: 2018-11-30
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Publication No.: US10554203B1Publication Date: 2020-02-04
- Inventor: Sualp Aras , Eung Jung Kim , Abidur Md Rahman
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Tuenlap Chan; Charles A. Brill; Frank D. Cimino
- Main IPC: H03K17/16
- IPC: H03K17/16 ; G01R31/00 ; G01R19/165

Abstract:
In some examples, the disclosure includes a circuit including a power field effect transistor (FET), a gate pull-down circuit, a pull-down bias circuit, and a radio frequency (RF) detector coupled to the source terminal of the power FET and the pull-down bias circuit. In an example, the RF detector circuit is configured to detect a presence of an alternating current signal at a source terminal of the power FET when the power FET is in a non-conductive state and control the pull-down bias circuit to bias the gate pull-down circuit to create a low impedance path between a gate terminal of the power FET and the source terminal of the power FET when the power FET is in the non-conductive state and the alternating current signal is present at the source terminal of the power FET.
Public/Granted literature
- US1251934A Wrench. Public/Granted day:1918-01-01
Information query