Invention Grant
- Patent Title: Method for forming multi-depth MEMS package
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Application No.: US15822538Application Date: 2017-11-27
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Publication No.: US10556790B2Publication Date: 2020-02-11
- Inventor: Wen-Chuan Tai , Fan Hu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81B7/02
- IPC: B81B7/02 ; B81C1/00

Abstract:
The present disclosure relates to a MEMS package having a cap substrate with different trench depths, and a method of fabricating the MEMS package. In some embodiments, a first trench in a first device region and a scribe trench in a scribe line region are formed at a front side of a cap substrate. Then, a hard mask is formed and patterned over the cap substrate. Then, with the hard mask in place, an etch is performed to the cap substrate such that an uncovered portion of a bottom surface of the first trench is recessed while a covered portion of the bottom surface of the first trench is non-altered to form a stopper within the first trench. Then, the front side of the cap substrate is bonded to a device substrate, enclosing the first trench over a first MEMS device.
Public/Granted literature
- US20190161342A1 METHOD FOR FORMING MULTI-DEPTH MEMS PACKAGE Public/Granted day:2019-05-30
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