The purpose of the present invention is to provide an exposure condition evaluation device that appropriately evaluates a wafer exposure condition or calculates an appropriate exposure condition, on the basis of information obtained from an FEM wafer, without relying on the formation state of the FEM wafer. In order to achieve the foregoing, the present invention proposes an exposure condition evaluation device which evaluates an exposure condition of a reduction projection exposure device, on the basis of the information of patterns exposed on a sample by the reduction projection exposure device, and which uses a second feature amount of a plurality of patterns formed by making exposure conditions uniform to correct a first feature amount of a plurality of patterns formed by a plurality of different exposure condition settings.