A semiconductor storage device includes a hookup circuit including first and second circuits connected respectively to first and second bit lines, a first circuit group including a first sense amplifier circuit connected to the first circuit and a first data register connected to the first sense amplifier circuit, a second circuit group including a second sense amplifier circuit connected to the second circuit and a second data register connected to the second sense amplifier circuit, and a memory cell array that is above the hookup circuit and the first and second circuit groups and includes a first memory cell connected to the first bit line and a second memory cell connected to the second bit line. The first circuit group, the hookup circuit, and the second circuit group are arranged in sequence along a first direction that is parallel to a surface of the semiconductor substrate.