Invention Grant
- Patent Title: Memory device and method of operating the same
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Application No.: US16442264Application Date: 2019-06-14
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Publication No.: US10559331B2Publication Date: 2020-02-11
- Inventor: Hee Youl Lee , Sung In Hong
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2017-0025935 20170228
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C7/10 ; G11C16/08 ; G11C16/10 ; G11C16/34 ; G11C16/04

Abstract:
Provided herein may be a memory device and a method of operating the same. The memory device may include a memory block including a plurality of pages coupled to word lines, respectively, peripheral circuits configured to, during a program operation, perform program, verify, and discharge operations on memory cells coupled to a word line selected from among the word lines, and a control logic configured to control the peripheral circuits such that, during the discharge operation performed after the verify operation, word lines, included in a region in which the program operation has not completed, and word lines, included in a region in which the program operation has completed, among the word lines, are discharged at different times.
Public/Granted literature
- US20190304515A1 MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2019-10-03
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