Invention Grant
- Patent Title: Method of training drive strength, ODT of memory device, computing system performing the same and system-on-chip performing the same
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Application No.: US16116369Application Date: 2018-08-29
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Publication No.: US10559335B2Publication Date: 2020-02-11
- Inventor: Yong-Seob Kim , Jung-Il Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0166251 20171205
- Main IPC: G11C7/20
- IPC: G11C7/20 ; G11C7/22 ; G11C5/14 ; H03K19/0175 ; G11C7/10

Abstract:
In a method of training for a memory device, an initialization operation is performed on the memory device when the memory device is powered on. A training operation is performed on a plurality of operating frequencies of the memory device such that at least one of a plurality of operating parameters of the memory device is obtained as a configurable operating parameter for each of the plurality of operating frequencies. The configurable operating parameter for each of the plurality of operating frequencies is stored as training data. An optimized operating parameter for the memory device is used based on the training data, a current operation mode of the memory device, and a current operating frequency of the memory device.
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