Invention Grant
- Patent Title: Multi-bit cell read-out techniques
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Application No.: US16028412Application Date: 2018-07-06
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Publication No.: US10559338B2Publication Date: 2020-02-11
- Inventor: Michail Tzoufras , Marcin Gajek , Kadriye Deniz Bozdag , Mourad El Baraji
- Applicant: SPIN MEMORY, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L27/22 ; H01L43/08
Abstract:
Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to program the state of a corresponding one of N cell elements of the MBC to a respective state parameter value. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.
Public/Granted literature
- US20200013445A1 Multi-Bit Cell Read-Out Techniques Public/Granted day:2020-01-09
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