Invention Grant
- Patent Title: Hybrid non-volatile memory devices with static random access memory (SRAM) array and non-volatile memory (NVM) array
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Application No.: US15704011Application Date: 2017-09-14
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Publication No.: US10559344B2Publication Date: 2020-02-11
- Inventor: Zhijiong Luo , Shu Wang , Xiaoming Jin
- Applicant: Aspiring Sky Co. Limited
- Applicant Address: CN Hong Kong
- Assignee: Aspiring Sky Co. Limited
- Current Assignee: Aspiring Sky Co. Limited
- Current Assignee Address: CN Hong Kong
- Agency: Hertzberg, Turk & Associates, LLC
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C11/408 ; G11C8/10 ; G11C5/02 ; G11C7/12 ; G11C7/18 ; G11C8/08 ; G11C11/419 ; G06F12/02 ; G06F12/06 ; G06F13/16 ; G11C11/418 ; G11C16/08

Abstract:
Technologies are generally described herein for a hybrid non-volatile memory structure that includes a number of SRAM buffers. SRAM access times may be achieved for non-volatile read/write operations by performing access queue buffered read/write operations first. The SRAM buffer may be shareable as a system SRAM. In other examples, a hybrid non-volatile memory according to some embodiments may include a high speed block and a high endurance block to store different types of data with different access needs. The hybrid non-volatile memory may also include a normal block to store the data which is non-frequently changed.
Public/Granted literature
- US20180081802A1 HYBRID NON-VOLATILE MEMORY STRUCTURES AND METHODS THEREOF Public/Granted day:2018-03-22
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