Invention Grant
- Patent Title: Bias-controlled bit-line sensing scheme for eDRAM
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Application No.: US15875052Application Date: 2018-01-19
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Publication No.: US10559346B2Publication Date: 2020-02-11
- Inventor: Abraham Mathews , Donald W Plass
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Margaret McNamara
- Main IPC: G11C11/4091
- IPC: G11C11/4091 ; G11C11/408

Abstract:
Embodiments include a method, memory system and a device for the operating a bit-line sensing circuit for bias-controlled bit-line sensing, the embodiments include an input for receiving a single-ended local bit-line signal, a pass device having a first terminal coupled to the input and a second terminal connected to a global bit-line node, The embodiments also include a first inverter having an input connected to the global bit-line node, a header circuit coupled to the first inverter and a first direct current (DC) bias circuit, and a footer circuit coupled to the first inverter and a second DC bias circuit. The embodiments include a second gated inverter having an input coupled to an output of the first inverter.
Public/Granted literature
- US20190228812A1 BIAS-CONTROLLED BIT-LINE SENSING SCHEME FOR EDRAM Public/Granted day:2019-07-25
Information query
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