Invention Grant
- Patent Title: Memory circuit having concurrent writes and method therefor
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Application No.: US15622738Application Date: 2017-06-14
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Publication No.: US10559356B2Publication Date: 2020-02-11
- Inventor: Perry H. Pelley , Anirban Roy , Gayathri Bhagavatheeswaran
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C7/10 ; G11C11/22 ; G11C16/10 ; G11C11/16 ; G11C8/14 ; G11C11/406

Abstract:
A memory circuit includes a plurality of memory tiles. Each memory tile in the plurality of memory tiles includes a plurality of bit cells and a control circuit coupled to the plurality of bit cells. The control circuit is configured to provide latched data to the plurality of bit cells during write operations. A first write control line is coupled to the control circuit in a first memory tile, and the first write control line is configured to initiate a first write operation in the first memory tile. And a second write control line is coupled to the control circuit in a second memory tile, and the second write control line configured to initiate a second write operation in the second memory tile. The second write operation may be initiated before the first write operation is completed.
Public/Granted literature
- US20180366191A1 MEMORY CIRCUIT HAVING CONCURRENT WRITES AND METHOD THEREFOR Public/Granted day:2018-12-20
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