- Patent Title: Method for producing silicon nitride film and silicon nitride film
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Application No.: US16082619Application Date: 2016-03-11
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Publication No.: US10559459B2Publication Date: 2020-02-11
- Inventor: Hiroshi Taka , Masaya Yamawaki , Shoichi Murakami , Masayasu Hatashita
- Applicant: TAIYO NIPPON SANSO CORPORATION , SPP TECHNOLOGIES CO., LTD.
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: TAIYO NIPPON SANSO CORPORATION,SPP TECHNOLOGIES CO., LTD.
- Current Assignee: TAIYO NIPPON SANSO CORPORATION,SPP TECHNOLOGIES CO., LTD.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Nixon & Vanderhye P.C.
- International Application: PCT/JP2016/057781 WO 20160311
- International Announcement: WO2017/154202 WO 20170914
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/02 ; C23C16/505 ; C23C16/455 ; C23C16/34 ; H01L21/31 ; C23C16/50
Abstract:
One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film (30) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber (40) accommodating the substrate (20) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber (40) is adjusted to be in a range of 0.2 to 3.5 W/cm2.
Public/Granted literature
- US20190088465A1 METHOD FOR PRODUCING SILICON NITRIDE FILM AND SILICON NITRIDE FILM Public/Granted day:2019-03-21
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