Invention Grant
- Patent Title: Film forming apparatus and film forming method
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Application No.: US16123416Application Date: 2018-09-06
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Publication No.: US10559460B2Publication Date: 2020-02-11
- Inventor: Akira Shimizu , Katsutoshi Ishii , Akinobu Teramoto , Tomoyuki Suwa , Yoshinobu Shiba
- Applicant: TOKYO ELECTRON LIMITED , TOHOKU UNIVERSITY
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2017-172348 20170907
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C16/48 ; C23C16/34 ; H01L21/67
Abstract:
There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container; a precursor gas supply part configured to supply a precursor gas into the processing container; a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container; and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.
Public/Granted literature
- US20190074177A1 FILM FORMING APPARATUS AND FILM FORMING METHOD Public/Granted day:2019-03-07
Information query
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