Invention Grant
- Patent Title: Multi-state device based on ion trapping
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Application No.: US15828007Application Date: 2017-11-30
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Publication No.: US10559463B2Publication Date: 2020-02-11
- Inventor: Ning Li , Yun Seog Lee , Joel P. de Souza , Devendra K. Sadana
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/58 ; H01M4/04 ; H01L21/768 ; H01L21/225 ; G11C5/14 ; H01L21/223 ; H01L21/762

Abstract:
A semiconductor structure is provided that contains a non-volatile battery which controls gate bias and has increased output voltage retention and voltage resolution. The semiconductor structure may include a semiconductor substrate including at least one channel region that is positioned between source/drain regions. A gate dielectric material is located on the channel region of the semiconductor substrate. A battery stack is located on the gate dielectric material. The battery stack includes, a cathode current collector located on the gate dielectric material, a cathode material located on the cathode current collector, a first ion diffusion barrier material located on the cathode material, an electrolyte located on the first ion diffusion barrier material, a second ion diffusion barrier material located on the electrolyte, an anode region located on the second ion diffusion barrier material, and an anode current collector located on the anode region.
Public/Granted literature
- US20190164750A1 MULTI-STATE DEVICE BASED ON ION TRAPPING Public/Granted day:2019-05-30
Information query
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