Invention Grant
- Patent Title: Dual pocket approach in PFETs with embedded SI-GE source/drain
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Application No.: US14692017Application Date: 2015-04-21
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Publication No.: US10559469B2Publication Date: 2020-02-11
- Inventor: Younsung Choi
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L29/08 ; H01L21/265 ; H01L21/225 ; H01L29/40 ; H01L29/51 ; H01L29/165
Abstract:
A p-type metal oxide semiconductor field effect transistor (PFET) includes a p-type silicon substrate and an n-type well formed in the p-type silicon substrate. The PFET also comprises a p-type source formed in the n-type well, a p-type drain formed in the n-type well, and dual pockets implanted in the n-type well and coupled to the source and drain. The dual pockets comprise a first pocket with first arsenic n-type dopants and a second pocket with second arsenic n-type dopants.
Public/Granted literature
- US20150303061A1 DUAL POCKET APPROACH IN PFETS WITH EMBEDDED SI-GE SOURCE/DRAIN Public/Granted day:2015-10-22
Information query
IPC分类:
