Disclosed is a method of manufacturing a bonded wafer, wherein a terrace forming step is carried out using a chamfering wheel which comprise a low grit number grinding stone and a high grit number grinding stone having a higher grit number than the low grit number grinding stone, and wherein the terrace forming step comprises: a coarse chamfering step of chamfering, after chamfering the active layer wafer, the insulating film from the active layer wafer side and further chamfering the support substrate wafer, using the low grit number grinding stone; and a finish chamfering step of finish chamfering, after the coarse chamfering step, a machined surface obtained from the coarse chamfering step, using the high grit number grinding stone.