Invention Grant
- Patent Title: Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
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Application No.: US16129319Application Date: 2018-09-12
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Publication No.: US10559479B2Publication Date: 2020-02-11
- Inventor: Nozomi Sakano , Daisuke Nishida
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2018-033594 20180227; JP2018-168057 20180907
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/67 ; H01L21/02 ; H01L21/687
Abstract:
A semiconductor manufacturing apparatus according to an embodiment comprises: a lid member; a support member; an oxidation resistant member; and an oxidizing system gas introducing member. The lid member is opposed to a surface of a semiconductor substrate. The support member supports the lid member. The oxidation resistant member is opposed to a back of the semiconductor substrate. The oxidizing system gas introducing member introduces an oxidizing system gas that oxidizes the back of the semiconductor substrate.
Public/Granted literature
- US20190267259A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2019-08-29
Information query
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