Heat treatment method of light irradiation type
Abstract:
In a state where nothing is held on a quartz susceptor provided in a chamber, a lower chamber window made of quartz is heated to and maintained at a stable temperature by light irradiation from a continuous lighting lamp. Then, immediately before a semiconductor wafer to be treated is transferred into the chamber, an object to be heated that absorbs infrared light is held on the susceptor, and the object to be heated is heated by light irradiation from the continuous lighting lamp. The susceptor is preliminary heated to a stable temperature by the heated object to be heated. The lower chamber window and the susceptor are each heated to the stable temperature when a semiconductor wafer to be treated first is transferred into the chamber, so that temperature histories of all semiconductor wafers constituting one lot can be made uniform. This enables dummy running, before a semiconductor wafer to be treated first is transferred, to be eliminated.
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