Invention Grant
- Patent Title: Method of manufacturing semiconductor device, method of loading substrate and non-transitory computer-readable recording medium
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Application No.: US16059760Application Date: 2018-08-09
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Publication No.: US10559485B2Publication Date: 2020-02-11
- Inventor: Yukinao Kaga , Ryosuke Yoshida
- Applicant: Kokusai Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan, LLC
- Main IPC: H01L21/677
- IPC: H01L21/677 ; C23C16/458 ; C23C16/455 ; C23C16/34 ; H01L21/67 ; H01L21/02 ; H01L21/66
Abstract:
Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.
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