- Patent Title: Dual-depth STI cavity extension and method of production thereof
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Application No.: US16107563Application Date: 2018-08-21
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Publication No.: US10559490B1Publication Date: 2020-02-11
- Inventor: Elliot John Smith , Nigel Chan , Ming-Cheng Chang
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/06 ; H01L21/306
Abstract:
A device including multiple depth STI regions with sidewall profiles, and method of production thereof Embodiments include a top region having a substantially vertical sidewall profile; and a bottom region having a width greater than or equal to the top region and a sidewall profile.
Public/Granted literature
- US20200066573A1 DUAL-DEPTH STI CAVITY EXTENSION AND METHOD OF PRODUCTION THEREOF Public/Granted day:2020-02-27
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