Invention Grant
- Patent Title: Insulating substrate and semiconductor device using same
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Application No.: US16099457Application Date: 2017-08-09
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Publication No.: US10559509B2Publication Date: 2020-02-11
- Inventor: Hiroshi Hozoji , Kenji Hayashi , Hiroyuki Itoh , Hisayuki Imamura , Hiroyuki Nagatomo
- Applicant: HITACHI METALS, LTD.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2016-171196 20160901
- International Application: PCT/JP2017/028889 WO 20170809
- International Announcement: WO2018/043076 WO 20180308
- Main IPC: H01L23/14
- IPC: H01L23/14 ; H02M7/48 ; H05K1/16 ; H01L23/12 ; H01L25/18 ; H01L25/00 ; H01L25/07 ; H01L23/15

Abstract:
In order to address the problem in that, by increasing the gate resistance of a power semiconductor element, while variation of switching time can be controlled, loss due to the gate resistance becomes larger and power efficiency for the entire system is lowered, the present invention provides an insulating substrate capable of uniformizing switching speeds of circuit elements while suppressing influence on power efficiency of the circuit elements. In the insulating substrate according to the present invention, part of a wiring layer is formed as a control signal circuit layer, and part of the control signal circuit layer is formed as a resistance layer that increases input resistance when the circuit element receives a control signal.
Public/Granted literature
- US20190221489A1 INSULATING SUBSTRATE AND SEMICONDUCTOR DEVICE USING SAME Public/Granted day:2019-07-18
Information query
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