Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16113523Application Date: 2018-08-27
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Publication No.: US10559514B2Publication Date: 2020-02-11
- Inventor: Yuichi Hashizume , Keishirou Kumada , Yoshihisa Suzuki , Yasuyuki Hoshi
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2017-195430 20171005
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L23/367 ; H01L29/417 ; H01L29/45 ; H01L29/16 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L21/02 ; H01L21/04 ; H01L29/36 ; H01L29/49 ; H01L29/78 ; H01L29/66 ; H01L29/423
Abstract:
An interlayer insulating film covers a gate electrode and a gate insulating film embedded in a trench. A source electrode includes a first TiN film, a NiSi film, a Ti film, a second TiN film, and an Al alloy film. The first TiN film covers a part of the interlayer insulating film so as to not contact a semiconductor substrate at a bottom of a contact hole. The NiSi film forms an ohmic contact with the semiconductor substrate in the contact hole. The Ti film, the second TiN film, and the Al alloy film are sequentially stacked on surfaces of the first TiN film and the NiSi film, spanning a front surface of the semiconductor substrate, from on the interlayer insulating film. A terminal pin is soldered to the source electrode 16, in an upright position orthogonal to the front surface of the semiconductor substrate.
Public/Granted literature
- US20190109065A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-11
Information query
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