Invention Grant
- Patent Title: Semiconductor device comprising PN junction diode and Schottky barrier diode
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Application No.: US16054246Application Date: 2018-08-03
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Publication No.: US10559552B2Publication Date: 2020-02-11
- Inventor: Keiji Okumura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Priority: JP2010-121375 20100527
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L25/07 ; H02M7/00 ; H01L23/00 ; H01L29/24 ; H01L23/31 ; H01L29/16 ; H01L29/78 ; H01L29/861 ; H01L29/872
Abstract:
A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.
Public/Granted literature
- US20180350781A1 SEMICONDUCTOR DEVICE COMPRISING PN JUNCTION DIODE AND SCHOTTKY BARRIER DIODE Public/Granted day:2018-12-06
Information query
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