Invention Grant
- Patent Title: Optoelectronic semiconductor component
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Application No.: US15741731Application Date: 2016-07-04
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Publication No.: US10559556B2Publication Date: 2020-02-11
- Inventor: Christian Leirer , Korbinian Perzlmaier
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: McDermott Will & Emery LLP
- Priority: DE102015111485 20150715
- International Application: PCT/EP2016/065714 WO 20160704
- International Announcement: WO2017/009085 WO 20170119
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L27/15 ; H01L33/38 ; H01L33/48 ; H01L33/62

Abstract:
An optoelectronic semiconductor component is disclosed, comprising: a semiconductor body (1) having a semiconductor layer sequence (2) with a p-type semiconductor region (3), an n-type semiconductor region (5), and an active layer (4) arranged between the p-type semiconductor region (3) and the n-type semiconductor region (5); a support (10) having a plastic material and a first via (11) and a second via (12); a p-contact layer (7) and an n-contact layer (8), at least some regions of which are arranged between the support (10) and the semiconductor body (1), wherein the p-contact layer (7) connects the first via (11) to the p-type semiconductor region (3) and the n-contact layer (8, 8A) connects the second via (12) to the n-type semiconductor region (5); and an ESD protection element (15) which is arranged between the support (10) and the semiconductor body (1), wherein the ESD protection element (15) is electrically conductively connected to the first via (11) and to the second via (12), and wherein a forward direction of the ESD protection element (15) is anti-parallel to a forward direction of the semiconductor layer sequence (2).
Public/Granted literature
- US20180197843A1 OPTOELECTRONIC SEMICONDUCTOR COMPONENT Public/Granted day:2018-07-12
Information query
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