Invention Grant
- Patent Title: Method for preparing semiconductor capacitor structure
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Application No.: US16126258Application Date: 2018-09-10
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Publication No.: US10559568B1Publication Date: 2020-02-11
- Inventor: Chung-Lin Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/00 ; H01L27/108 ; H01L49/02 ; H01L21/84

Abstract:
The present disclosure provides a semiconductor capacitor structure. The semiconductor capacitor structure includes a substrate, a comb-like bottom electrode disposed over the substrate, a top electrode disposed over the comb-like bottom electrode, and a dielectric layer sandwiched between the top electrode and the comb-like bottom electrode. The comb-like bottom electrode includes a plurality of tooth portions parallel to the substrate and a supporting portion coupled to the plurality of tooth portions and perpendicular to the substrate.
Information query
IPC分类: