Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15700615Application Date: 2017-09-11
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Publication No.: US10559569B2Publication Date: 2020-02-11
- Inventor: Il-Sik Jang , Ji-Hwan Park , Mi-Ri Lee , Bong-Seok Jeon , Yong-Soo Joung , Sun-Hwan Hwang
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0175505 20161221
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L49/02 ; H01L21/321 ; H01L21/3215 ; H01L21/3213 ; H01L21/3205 ; H01L21/223
Abstract:
A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.
Public/Granted literature
- US20180175042A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2018-06-21
Information query
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