Invention Grant
- Patent Title: Vertical transistor contact for a memory cell with increased density
-
Application No.: US16023434Application Date: 2018-06-29
-
Publication No.: US10559572B2Publication Date: 2020-02-11
- Inventor: Brent A. Anderson , Terence B. Hook , Junli Wang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L21/768 ; H01L23/522
Abstract:
According to an embodiment of the present invention, a method for forming a contact for a transistor includes forming a first doped region over a semiconductor substrate. A second doped region is formed in portions of the first doped region in which portions the first doped region extends below the second doped region. A gate is formed alongside portions of a first fin. Portions of the second doped region and portions of the first doped region extending below the second doped region are removed. Portions of the gate are removed. A metal is deposited in the removed portion of the gate, the removed portion of second doped region, and the first doped region extending below the second doped region to create the contact.
Public/Granted literature
- US20200006353A1 VERTICAL TRANSISTOR CONTACT FOR A MEMORY CELL WITH INCREASED DENSITY Public/Granted day:2020-01-02
Information query
IPC分类:
