Invention Grant
- Patent Title: Three-dimensional vertical one-time-programmable memory comprising Schottky diodes
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Application No.: US15947852Application Date: 2018-04-08
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Publication No.: US10559574B2Publication Date: 2020-02-11
- Inventor: Guobiao Zhang
- Applicant: Guobiao Zhang
- Applicant Address: CN HangZhou, ZheJiang US OR Corvallis
- Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee Address: CN HangZhou, ZheJiang US OR Corvallis
- Priority: CN201610234999 20160416; CN201810056753 20180122; CN201810072197 20180125; CN201810075105 20180126
- Main IPC: H01L27/112
- IPC: H01L27/112 ; H01L23/525 ; H01L27/24 ; H01L29/66 ; G11C17/16 ; H01L27/06
Abstract:
The present invention discloses a three-dimensional vertical read-only memory (3D-OTPV) comprising Schottky diodes. It comprises a plurality of vertical OTP strings formed side-by-side on a substrate circuit. Each OTP string is vertical to the substrate and comprises a plurality of vertically stacked OTP cells. Each OTP cell comprises an antifuse layer. A plurality of Schottky diodes are formed between the horizontal address lines and the vertical address lines.
Public/Granted literature
- US20180226414A1 Three-Dimensional Vertical One-Time-Programmable Memory Comprising Schottky Diodes Public/Granted day:2018-08-09
Information query
IPC分类:
