Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
-
Application No.: US15962567Application Date: 2018-04-25
-
Publication No.: US10559607B2Publication Date: 2020-02-11
- Inventor: Masao Okihara
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2016-100782 20160519
- Main IPC: H01L27/144
- IPC: H01L27/144 ; H01L31/0216 ; H01L31/103 ; H01L27/146

Abstract:
A semiconductor device includes a substrate having a main surface, the main surface including a first region and a second region, and an element separation region that disposed on a boundary between the first region and the second region, a first filter disposed on the main surface in the first region, and a second filter disposed on the main surface in the second region, the first filter and the second filter overlapping each other in the element separation region in a plan view of the semiconductor device.
Public/Granted literature
- US20180247960A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-08-30
Information query
IPC分类: