Invention Grant
- Patent Title: Dual conversion gain circuitry with buried channels
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Application No.: US15916947Application Date: 2018-03-09
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Publication No.: US10559614B2Publication Date: 2020-02-11
- Inventor: Minseok Oh
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Treyz Law Group, P.C.
- Agent Joseph F. Guihan
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/148 ; H04N5/359 ; H04N5/361 ; H04N5/374 ; H04N5/3745 ; H04N5/378 ; H04N5/355

Abstract:
An imaging device may have an array of image sensor pixels each having a photodiode and a floating diffusion node. Each image sensor pixel in the array may also include a dual conversion gain switch and a dual conversion gain capacitor that allows the image sensor pixel to operate in a low conversion gain mode during which the switch is turned on to share charge between the floating diffusion node and the dual conversion gain capacitor, and a high conversion gain mode in which the switch is turned off. During integration, the photodiode may generate more charge than can be held at the floating diffusion node. A buried channel may be provided beneath the dual conversion gain switch to provide a path along which the excess charge can be shared between the floating diffusion node and the dual conversion gain capacitor even when the dual conversion gain switch is off.
Public/Granted literature
- US20190280031A1 DUAL CONVERSION GAIN CIRCUITRY WITH BURIED CHANNELS Public/Granted day:2019-09-12
Information query
IPC分类: