Invention Grant
- Patent Title: Method for manufacturing image capturing device and image capturing device
-
Application No.: US16420126Application Date: 2019-05-22
-
Publication No.: US10559623B2Publication Date: 2020-02-11
- Inventor: Takeshi Kamino , Takahiro Tomimatsu
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/28 ; H04N5/374 ; H01L29/66 ; H01L21/266 ; H01L21/285
Abstract:
An offset spacer film (OSS) is formed on a side wall surface of a gate electrode (NLGE, PLGE) to cover a region in which a photo diode (PD) is disposed. Next, an extension region (LNLD, LPLD) is formed using the offset spacer film and the like as an implantation mask. Next, process is provided to remove the offset spacer film covering the region in which the photo diode is disposed. Next, a sidewall insulating film (SWI) is formed on the side wall surface of the gate electrode. Next, a source-drain region (HPDF, LPDF, HNDF, LNDF) is formed using the sidewall insulating film and the like as an implantation mask.
Public/Granted literature
- US20190280041A1 METHOD FOR MANUFACTURING IMAGE CAPTURING DEVICE AND IMAGE CAPTURING DEVICE Public/Granted day:2019-09-12
Information query
IPC分类:
