A memory device according to an embodiment includes a first conductive layer, a second conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and an organic molecular layer disposed between the variable resistance layer and the second conductive layer and containing organic molecules. Each of the organic molecules includes a first fused polycyclic unit having a first HOMO level, a second fused polycyclic unit having a second HOMO level higher in energy than the first HOMO level, and a third fused polycyclic unit disposed between the first fused polycyclic unit and the second fused polycyclic unit. The third fused polycyclic unit has a third HOMO level higher in energy than the first HOMO level and the second HOMO level.