Invention Grant
- Patent Title: Solid-state image sensor, method of producing the same, and electronic apparatus
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Application No.: US15990192Application Date: 2018-05-25
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Publication No.: US10559628B2Publication Date: 2020-02-11
- Inventor: Shunsuke Maruyama
- Applicant: Sony Semiconductor Solutions Corporation
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2013-263632 20131220
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/30
Abstract:
A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.
Public/Granted literature
- US20180277605A1 SOLID-STATE IMAGE SENSOR, METHOD OF PRODUCING THE SAME, AND ELECTRONIC APPARATUS Public/Granted day:2018-09-27
Information query
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