Invention Grant
- Patent Title: Power semiconductor device
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Application No.: US16081140Application Date: 2016-12-21
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Publication No.: US10559659B2Publication Date: 2020-02-11
- Inventor: Atsufumi Inoue , Seiji Oka , Tsuyoshi Kawakami , Akihiko Furukawa , Hidetada Tokioka , Mutsumi Tsuda , Yasushi Fujioka
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-076360 20160406
- International Application: PCT/JP2016/088173 WO 20161221
- International Announcement: WO2017/175426 WO 20171012
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/06 ; H01L29/12 ; H01L23/522 ; H01L29/739 ; H01L21/3205 ; H01L21/768 ; H01L23/48 ; H01L29/78 ; H01L23/00 ; H01L29/16 ; H01L29/20 ; H01L29/66
Abstract:
A power semiconductor device includes an emitter electrode disposed on a semiconductor substrate and through which a main current flows, a conductive layer that is disposed on the emitter electrode and is not a sintered compact, and a sintered metal layer that is disposed on the conductive layer and is a sintered compact. The sintered metal layer has a size to cover all the emitter electrode in plan view, and has higher heat conductivity than the conductive layer. The power semiconductor device can improve heat dissipation performance and adhesion.
Public/Granted literature
- US20190058037A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2019-02-21
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