Invention Grant
- Patent Title: Semiconductor device with surface insulating film
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Application No.: US16281954Application Date: 2019-02-21
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Publication No.: US10559668B2Publication Date: 2020-02-11
- Inventor: Yuki Nakano , Ryota Nakamura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2013-043407 20130305
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/417 ; H01L29/49 ; H01L29/10 ; H01L29/16 ; H01L29/20 ; H01L29/36 ; H01L29/51 ; H01L29/40
Abstract:
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, and a surface insulating film disposed in a manner extending across the cell portion and the outer peripheral portion, and in the cell portion, formed to be thinner than a part in the outer peripheral portion.
Public/Granted literature
- US20190181235A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-06-13
Information query
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