Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16172647Application Date: 2018-10-26
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Publication No.: US10559701B2Publication Date: 2020-02-11
- Inventor: Dae Hwan Chun
- Applicant: Hyundai Motor Company , Kia Motors Corporation
- Applicant Address: KR Seoul KR Seoul
- Assignee: Hyundai Motor Company,Kia Motors Corporation
- Current Assignee: Hyundai Motor Company,Kia Motors Corporation
- Current Assignee Address: KR Seoul KR Seoul
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless
- Priority: KR10-2018-0048923 20180427
- Main IPC: H01L29/808
- IPC: H01L29/808 ; H01L29/10 ; H01L29/66 ; H01L29/06 ; H01L29/16 ; H01L29/08 ; H01L29/36
Abstract:
A semiconductor device is provide. The device includes a first n− type of layer, a second n− type of layer, and an n+ type of region sequentially disposed on a first surface of a substrate. A trench is disposed on a side surface of the second n− type of layer, a p type of region is disposed between the second n− type of layer and the trench, and a gate electrode is disposed on a bottom surface of the trench. A source electrode is disposed on the n+ type of region and a drain electrode is disposed on a second surface of the substrate. The second n− type of layer includes a first concentration layer, a second concentration layer, a third concentration layer, and a fourth concentration layer sequentially disposed on the first n− type of layer.
Public/Granted literature
- US20190334036A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-10-31
Information query
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