A light-emitting device has a first conductive semiconductor layer; an active layer arranged on the first conductive semiconductor layer, and including a plurality of first recesses; an EBL arranged on the active layer, and including a plurality of second recesses arranged on the first recesses; and a second conductive semiconductor layer arranged on the EBL. The ratio of a first area doping concentration and a second recess doping concentration is from 1:0.8 to 1:1. The active layer emits first light and second light, the first light has a peak in a wavelength of 450 nm to 499 nm, and the second light has a peak in a wavelength of 500 nm to 550 nm.