A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.