Invention Grant
- Patent Title: Magnetoresistive effect element
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Application No.: US16081192Application Date: 2018-01-17
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Publication No.: US10559749B2Publication Date: 2020-02-11
- Inventor: Kazuumi Inubushi , Katsuyuki Nakada
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2017-040526 20170303
- International Application: PCT/JP2018/001187 WO 20180117
- International Announcement: WO2018/159129 WO 20180907
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01F10/32 ; H01L43/02 ; H01L43/08

Abstract:
A magnetoresistive effect element, which includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes an Ag alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Ag, AgγX1-γ (1) where X indicates one element selected from the group made of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0
Public/Granted literature
- US20190181333A1 MAGNETORESISTIVE EFFECT ELEMENT Public/Granted day:2019-06-13
Information query
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