Invention Grant
- Patent Title: Bottom electrode for semiconductor memory device
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Application No.: US16139333Application Date: 2018-09-24
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Publication No.: US10559751B1Publication Date: 2020-02-11
- Inventor: Chih-Chao Yang , Theodorus E Standaert , Daniel C Edelstein
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Jeffrey S LaBaw; Steven J Meyers; Alvin Borromeo
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
A conductive microstud is formed in a recess of an insulator layer formed on the substrate. A bottom pedestal is formed on a top surface of the microstud. The material used for the bottom pedestal has a lower electrochemical voltage than a material used for the microstud. A top pedestal is formed on a top surface of the bottom pedestal. The top surface of at least one of the bottom pedestal and top pedestal is planarized. A conductive layer is formed on a top surface of the top pedestal. Next, a conical structure is formed. The conical structure is comprised of at least the conductive layer and a top portion of the top pedestal.
Information query
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