Invention Grant
- Patent Title: Method for producing a first electrode/active layer/second electrode stack
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Application No.: US15736266Application Date: 2016-06-16
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Publication No.: US10559771B2Publication Date: 2020-02-11
- Inventor: Jean-Marie Verilhac , Simon Charlot
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ISORG , TRIXELL
- Applicant Address: FR Paris FR Grenoble FR Moirans
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,ISORG,TRIXELL
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,ISORG,TRIXELL
- Current Assignee Address: FR Paris FR Grenoble FR Moirans
- Agency: Baker & Hostetler LLP
- Priority: FR1555480 20150616
- International Application: PCT/EP2016/063922 WO 20160616
- International Announcement: WO2016/202938 WO 20161222
- Main IPC: H01L51/44
- IPC: H01L51/44 ; H01L51/50 ; H01L31/0224 ; H01L51/52 ; H01L51/56

Abstract:
A process for producing a stack of a first electrode/active layer/second electrode, which stack is intended for an electronic device, in particular an organic photodetector or an organic solar cell, the process comprises the following steps: (a) depositing a first conductor layer on the front side of a substrate, in order to form the first electrode; and (b) depositing an active layer taking the form of a thin organic semiconductor layer, this layer including discontinuous zones; wherein this process further comprises the following steps: (d) depositing a resist layer on that side of the stack which is opposite the substrate, which is at least partially transparent; (e) exposing the resist layer via the back side of the substrate; (f) developing the resist layer; and (g) depositing a second conductor layer in order to form the conductive second electrode.
Public/Granted literature
- US20180159060A1 METHOD FOR PRODUCING A FIRST ELECTRODE / ACTIVE LAYER / SECOND ELECTRODE STACK Public/Granted day:2018-06-07
Information query
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