Invention Grant
- Patent Title: High efficiency S-band amplifier
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Application No.: US16058796Application Date: 2018-08-08
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Publication No.: US10560063B1Publication Date: 2020-02-11
- Inventor: Steven N. Bundick , Wei-Chung Huang
- Applicant: United States of America as represented by the Administrator of NASA
- Applicant Address: US DC Washington
- Assignee: United States of America as represented by the Administrator of NASA
- Current Assignee: United States of America as represented by the Administrator of NASA
- Current Assignee Address: US DC Washington
- Agent Christopher O. Edwards; Bryan A. Geurts
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H03F3/19 ; H03F1/56 ; H03H7/38

Abstract:
A method of constructing an amplifier circuit includes simulating an output of an amplifier device of the amplifier circuit over a range of impedances to yield a simulated maximum power and a simulated maximum power added efficiency at a particular frequency, fabricating a plurality of output matching networks and input matching networks with impedances above and below the impedances that yield the simulated maximum power and simulated maximum power added efficiency, empirically determining physical dimensions of an optimized output matching network and an optimized input matching network that result in actual impedances that provide an actual maximum power and maximum power added efficiency at the particular frequency, and coupling the optimized output matching network to an output of the amplifier device and coupling the optimized input matching network between an output of a driver circuit and an input of the amplifier device.
Information query
IPC分类: