Invention Grant
- Patent Title: Level shift circuit
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Application No.: US16123266Application Date: 2018-09-06
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Publication No.: US10560084B2Publication Date: 2020-02-11
- Inventor: Toshihiro Yagi
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-173477 20170908; JP2018-049762 20180316
- Main IPC: H03K17/0412
- IPC: H03K17/0412 ; H03K3/356 ; H03K19/017 ; H03K19/0185

Abstract:
According to one embodiment, in a level shift circuit, a first PMOS transistor is electrically connected at a gate to a first node to which a first signal having an amplitude to be a first power-supply potential is input, is electrically connected to a second node at a source, and is electrically connected at a drain to an output terminal from which a signal having an amplitude to be a second power-supply potential is output. The first NMOS transistor is electrically connected to the first node at a gate and is electrically connected to the output terminal at a drain. The second PMOS transistor is electrically connected to a node to be the second power-supply potential at a source, and is electrically connected to the second node at a drain. The potential adjusting circuit is electrically connected to at least the second node.
Public/Granted literature
- US20190081622A1 LEVEL SHIFT CIRCUIT Public/Granted day:2019-03-14
Information query
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