- Patent Title: Global-shutter vertically integrated pixel with high dynamic range
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Application No.: US15957729Application Date: 2018-04-19
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Publication No.: US10560646B2Publication Date: 2020-02-11
- Inventor: Mihail Milkov , Vincent Douence
- Applicant: Teledyne Scientific & Imaging, LLC
- Applicant Address: US CA Thousand Oaks
- Assignee: Teledyne Scientific & Imaging, LLC
- Current Assignee: Teledyne Scientific & Imaging, LLC
- Current Assignee Address: US CA Thousand Oaks
- Agency: M.J. Ram and Associates
- Main IPC: H04N5/355
- IPC: H04N5/355 ; H04N5/363 ; H04N5/378 ; H01L27/146

Abstract:
A pixel comprising a pinned photodiode (PPD) which generates a photocurrent Iph, a transfer gate connected in series between the PPD and a first node, a low-gain select transistor connected between the first node and a second node, a reset transistor connected between the second node and a reset voltage, a capacitance connected between the second node and a first constant potential, and a source-follower transistor whose source, gate and drain are connected to an output node, the first node and a second constant potential, respectively. When properly arranged, a vertically integrated (3D) global-shutter pinned PPD pixel is provided, which uses an overflow integration capacitor and subthreshold conduction of the reset transistor for increased dynamic range. Global shutter operation is achieved by storing the pixel output on sampling capacitors in another semiconductor layer at the end of integration.
Public/Granted literature
- US20190327432A1 GLOBAL-SHUTTER VERTICALLY INTEGRATED PIXEL WITH HIGH DYNAMIC RANGE Public/Granted day:2019-10-24
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