Invention Grant
- Patent Title: Power semiconductor module and power semiconductor device
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Application No.: US15904450Application Date: 2018-02-26
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Publication No.: US10561021B2Publication Date: 2020-02-11
- Inventor: Kenshi Terashima
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2017-098522 20170517
- Main IPC: H05K1/14
- IPC: H05K1/14 ; H01L23/498 ; H01L25/16 ; H05K1/18 ; H01R12/58

Abstract:
The area projections or a spacer occupies on the upper surface of a resin casing increases as the size of a power semiconductor module decreases, and therefore another means for defining a clearance between a control board and the resin casing is desired. A power semiconductor module is provided, including: a housing which houses a power semiconductor chip; and at least one control pin or guide pin which protrudes outward from an upper surface of the housing, wherein the at least one control pin or guide pin has at least one step in a height direction from the upper surface of the housing toward a tip farthest from the housing.
Public/Granted literature
- US20180338376A1 POWER SEMICONDUCTOR MODULE AND POWER SEMICONDUCTOR DEVICE Public/Granted day:2018-11-22
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